BLF6G22LS-130,118 NXP Semiconductors, BLF6G22LS-130,118 Datasheet - Page 9

• Manufacturer Part Number: BLF6G22LS-130,118
• Description: IC BASESTATION DRIVER SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-130,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 34A
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 30W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.135 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 34 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060923118; BLF6G22LS-130 /T3; BLF6G22LS-130 /T3; BLF6G22LS-130/T3; BLF6G22LS-130/T3

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22LS-130_1
Product data sheet
Document ID
BLF6G22LS-130_1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Release date Data sheet status
20080523
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Product data sheet
Rev. 01 — 23 May 2008
Change notice
-
BLF6G22LS-130
Power LDMOS transistor
Supersedes
-
© NXP B.V. 2008. All rights reserved.
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