BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 20

• Manufacturer Part Number: BLF7G22L-130,118
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130,118

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Power - Output: 30W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063499118

Recommended products
Note: Using the BF1108 as passive loop through switch between the RF input
and output of a NIM tuner can save considerable energy. For example, when the
HDR is not in used, the TV signal can still be distributed to the TV without having
to power up the active splitter circuit in the HDR. That is because the BF1108 RF
switch is closed when no power is supplied to it, and is open when it is powered
on. For 3.3 V applications, the BF1118 can be used instead.
* = check status at 3.1 new products, as this type has not been released yet for
mass production.
^ = this new series of LNA MMICs is designed specifically for high linearity (IP3O
of 29 dBm), low noise application like those in an active splitter or NIM tuner.
Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped
with internal bias and matched to 75 ohms internally. For the VGAs, current
consumption is < 5mA during the bypass mode. Only 2 external components are
needed, thus saving precious circuit board space!
22
Function
Function
Product highlight:
BF11x8 silicon RF switch, MOSFET
This switch is a combination of a depletion type field-effect transistor
and a band switching diode in an SOT143 or SOT343 package.
The low insertion loss and high isolation capabilities of this device
provide excellent RF switching functions. The gate of the MOSFET
can be isolated from ground with the diode, resulting in low losses.
Integrated diodes between gate and source and between gate and
drain protect against excessive input voltage surges.
RF Switch /
PLT switch
VGA
LNA
NXP Semiconductors RF Manual 14
Product
Product
RF BiMOS
RF bipolar
transistor
MOSFET
MMIC
3.3V Silicon
RF Switch
plus a bypass
levels of 5 dB
and a bypass
5V Silicon RF
level of 10dB
level of 10dB
Wideband
and 10 dB,
Wideband
Wideband
Wideband
transistor
transistor
transistor
transistor
with gain
with gain
with gain
switch
mode.
mode.
th
edition
SOT143B
SOT143R
SOT343
SOT343R
Package
SOT23
SOT143B
SOT143R
SOT343
SOT343R
Package
SOT363
SOT363
SOT363
SOT143
SOT89
Type
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
Type
BGU7033*^
BGU7032*^
BGU7031*^
BFG520
BFG540
BFQ540
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation higher. That way, the
MOSFET would not be constantly under AGC even under nominal RF input level.
Features
`
`
`
`
`
Function
AGC control
Specially designed for low loss RF switching up to 1 GHz
Easy to design-in
Power ON: low losses
Power OFF: high isolation
ON or OFF, ZERO power consumption
amplifier
Product
MOSFET
2 – in – 1 with
band switch
2 – in – 1
@ 5V
@ 5V
5V
Package
SOT363
SOT363
SOT343
Type
BF1215
BF1216
BF1217