BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 41

• Manufacturer Part Number: BLF7G22L-130,118
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130,118

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Power - Output: 30W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063499118

2.4
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low power consumption and low-spurious solutions that simplify
design-in and lower the total cost of ownership.
Features
` TFF11xxxHN family: Lowest noise LO generators for
` Maximum power consumption for all types, typical 330 mW
` Phase-noise compliant with IESS-308 (Intelsat)
` Proven QUBiC4X SiGe:C technology (120-GHz f
` External loop filter
` Differential input and output
` Lock-detect output
` Internally stabilized voltage reference for loop filter
` 24-pin HVQFN (SOT616-1) package
Applications : TFF11xxxHN family
` Industrial/Medical Test and Measurement Equipment
` Electronic Warfare (EW)
` Electronic Countermeasures (ECM)
` Point to Point
` Point to Multi-Point
` Satellite Communication
a full family in range 7 to 15 GHz
Low-noise LO generators for microwave & mmWave radios
T
process)
These low-noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier,
for lower overall cost and faster development, enabling quick
time-to-market.
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
and consume much less power. The process technology also
enables higher integration, for added features. NXP owns the
industrial base for production (wafer fab, test, assembly),
so volume supplies can be assured.
The TFF1003HN is the basis for the entire family of LO
generators. It has VCO coverage of 12.8 to 13.05 GHz and
accepts input signals from 50 to 816 MHz. The divider can be set
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
stability of ±2 dB. The family of LO generators is completed by
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
devices is consistent with the TFF1003HN.
All the LO generators have very low power dissipation typical
330 mW, and all are available in a space-saving 24-pin HVQFN
package.
Full portfolio overview of low noise LO generators for
general microwave applications at chapter 3.4.2
NXP Semiconductors RF Manual 14
th
edition
43