BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 70

• Manufacturer Part Number: BLF7G22L-130,118
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130,118

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Power - Output: 30W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063499118

Wideband linear mixer
Notes:
Low-noise wideband amplifiers
Notes:
^
General-purpose, med. power ampl. (50 ohm gain blocks)
Notes:
Medium power amplifier MMICs for all 400 - 2700 MHz applications
SiGe:C MMICs (for e.g. GPS):
SiGe:C MMICs for Set-Top-Boxes
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Bold Red
Notes:
72
The specifications of the BGA7130 and BGA7133 are target specifications until development is completed.
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
BGU7003
BGU7005
BGU7006*
BGU7007*
Type
BGA2022
Type
BGA2001
BGA2002^
BGA2003
BGA2011
BGA2012
Type
BGA6289
BGA6489
BGA6589
= Automotive qualified
BGU7033*
BGU7032*
BGU7031*
Type
Type
Type
(1)
Gain = GP, power gain,
(1)
(1)
(1)
= New, highly recommended product
NXP Semiconductors RF Manual 14
Gain = GP, power gain.
MSG
Device voltage without bias resistor.
SOT908
SOT908
SOT908
SOT908
SOT89
SOT89
WLCSP***
Package
SOT89
SOT89
SOT89
Package
SOT891
SOT886
SOT886
(2)
Package
Adjustable bias
Package
Package
SOT343R
SOT343R
SOT343R
SOT363
SOT363
SOT363
SOT363
SOT363
Package
SOT363
leadless
leadless
leadless
leadless
leaded
leaded
Min
2.2
1.5
1.5
1.5
voltage
Supply
V
(V)
4.1
5.1
4.8
(2)
s
V
(1)
V
Flatness of frequency response = FL
cc
Max
2.85
2.85
2.85
2.85
(V)
2.5
2.5
2.5
@
(2)
V
400 - 2700
400 - 2700
400 - 2700
400 - 2700
400 - 2700
400 - 2700
3
3
(V)
s
Frequency
V
DG = Gain control range
3
(3)
(MHz)
(mA)
40 - 1000
40 - 1000
40 - 1000
s
84
78
81
@
|S
I
range
(MHz)
s
f
Min
@
21
Supply current
3
(mA)
-
-
-
10
|
th
15
2
(mA)
I
4
4
7
s
edition
(2)
I
6
s
(dB)
Typ
NF
4.5
3.8
4.8
3.5
3.1
3.0
mA
I
-
(2)
Typ
cc
V
(V)
5
5
5
5
5
5
(dB)
Gain = |S
cc
NF
1.3
1.3
1.8
1.5
Frequency
-
800 - 2500
Max
RF Input
15
Gain
supply
Range
@ 900 MHz
-
-
-
GP 10 dB
GP 10 dB
GP 10 dB
(mA) (mA)
(dB)
GP 5 dB
@ 900 MHz
Typ
Bypass
Bypass
130
110
180
170
15
20
22
Mode
-
-
Gain
(dB)
22
22
24
19
(2)
Min
21
16
-
I
-
-
-
(1)
(1)
(1)
(3)
|
cc
2
Max
(dBm)
200
325
power gain
OIP3
Insertion
-
-
-
-
31
33
33
18****
16.5**
16.5**
(dBm)
18,3
IIP3
|s
Typ
-6.5
-7.4
-7.4
Frequency
10
dB
IF Output
21
-
50 - 500
|2
Range
Min
(V)
V
V
0
0
0
0
(V)
(dBm)
-
-
5
5
5
5
5
5
P
I(D)L(SHDN)
CC
20
17
21
Max
1dB
20
(dB)
NF
1.3
1.3
1.8
1.7
-
-
-
-
Max
@
(V)
0.7
0.7
0.7
0.7
shutdown control
@1800 MHz
-
-
figure
Noise
Typ
0,8
(dB)
0,9
0,9
0,9
(mA)
NF
3.7
3.3
3.3
NF
dB
19.5
19.5
Gain
I
43
43
43
43
(dB)
(dB)
16
16
4
4
NF
CC
9
-
Min
(V)
2.5
2.5
2.5
2.5
(1)
(3)
V
(1)
(1)
-
-
@ 880 MHz
I(D)H(SHDN)
1.8 V,
V
Min
Gain
-14
-14
-14
cc
Gain
@1800 MHz
(dB)
-
(dBm)
(dB)
IIP3
13
16
17
-4.5
-4.5
-4.8
Vbias
Vbias
Vbias
Vbias
Gain
=
Max
10
5
(V)
(dB)
-
-
-
10
10
10
(2)
-2
-2
Input power at 1 dB gain
5
(1)
1.8 V,
V
Typ
-11
-11
-11
(1)
cc
(dBm)
-
OIP3
(dBm)
I
OIP3
MHz
I(D)L(SHDN)
=
100
28
30
32
20
20
26
24
22
(µA)
compression
4
Typ
4
4
4
4
-
-
2.5 V,
5 mA
(dB)
V
P
NF
dBm
I
4.5
2.5
4.5
2.5
4.5
-20
cc
6
cc
I(1 dB)
@ 1.575 GHz
-
-
-
P1 dB
Gain
(dBm)
=
=
GHz
18.2
(dB)
18.6
14.8
17.1
17.1
NF
15
20
17
1
9
Gp
dB
22
22
20
19
18
18
@1900 MHz
2.85 V,
(3)
Typ @ f = 940 MHz
V
Min
-11
-12
-11
cc
RF performance
(dBm)
-
(dB) @
P
Gain
=
L(1dB)
10
(dB)
GHz
14
10
13
13
11.6
11.6
11.1
11.6
P
2.6
dBm dBm
9
6
8
L(1dB)
25
24
28
28
30
33
Gain
2.85 V,
(1)
V
GHz
Typ
2.5
-8
-8
12
15
15
cc
-9
-
(dBm)
=
OIP3
OIP3
GHz
10.7
10.7
10.1
10.5
(2)
3.0
6.5
(dBm)
10
38
38
44
41
45
46
OIP3
29
29
29
29
29
29
1.8 V,
V
Min
cc
5
1
5
-
Input third-order intercept point
=
f1 = 1713 MHz, f2 = 1851 MHz
NF
dB
V
4.5
4.5
5
3
3
3
4
4
(V)
(V)
4.5
4.5
4.5
V
V
(V)
4
s
6
6
6
s
s
1.8 V,
(1)
V
Typ
FL
(dB)
cc
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
9
4
9
-
=
Gp
Limits
dB
Limits
16
16
(2)
Limits
13
12
12
12
(mA)
(mA)
(mA)
Typ @ f = 1960 MHz
120
120
120
10
30
30
30
30
15
I
I
I
s
s
RF performance
2.5 V,
s
5 mA
V
I
dBm
cc
IP3
cc
0
P
-
-
-
dBm dBm
=
=
L(1dB)
25
28
28
30
33
24
RL
(dB)
i
(mW)
(mW)
(mW)
12
12
12
12
P
P
135
135
135
135
8
8
480
480
480
40
P
70
out
tot
tot
2.85 V,
tot
V
Min
OIP3
cc
5
5
5
-
38
38
43
43
45
47
=
(dB)
RL
18
17
18
18
V
2.85
8
8
Typ
12
12
NF
dB
cc
V,
9
in
-
5
4
5
4
4
4
=