BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 42

• Manufacturer Part Number: BLF7G22L-130,118
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130,118

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Power - Output: 30W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063499118

2.5
NXP satellite LNB devices BFU725F/N1 and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are
manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and are
the latest additions to NXP’s leading portfolio for satellite LNB.
BFU725F/N1 RF transistor
The BFU725F/N1 is a RF transistor that can be used in the
LNA part and as a mixer for a DBS LNB. In either application,
it delivers low power consumption, good noise and linearity,
and the lowest cost compared to GaAs pHEMT solution.
BFU725F/N1 as mixer in Ku-band LNB
` Power consumption: 2 mA at 5 V
` Single supply: 3, 5, or 6 V
` Noise, Single Side Band: 7 dB (including BPF)
` Linearity: better than 0 dBm OIP3
` Gain, SSB: 2 dB (including BPF)
` RF/LO/IF Match: better than 12/15/18 dB
` Broadband unconditionally stable
` LO-RF isolation better than 18 dB
BFU725F/N1 as 2
` Power consumption: 11 mA at 5 V
` Single supply: 3, 5, or 6 V
` Noise, SSB: typically 1.3 dB
` Linearity: better than 10 dBm OIP3
` Gain, SSB: typically 10.5 dB
` In/Out match: better than 7/12 dB
` Broadband unconditionally stable
44
NXP Semiconductors RF Manual 14
Complete satellite portfolio for all LNB architectures
nd
or 3
rd
stage LNA in Ku-band LNB
th
edition
BFU725F/N1 as LNA for C-band LNB
` Power consumption: 7 mA at 5 V
` Single supply: 5 or 6 V
` Noise: 0.65 dB
` Linearity: better than 10 dBm OIP3
` Gain: 15 dB
` In/Out Match: better than 10 dB
` Broadband unconditionally stable
BGA28xx MMICs as IF amplifiers (1
For compatibility with existing designs, the series uses a
market standard package, the SOT363 and the pin-compliant
SOT363F package. The pinning is identical to NXP’s current
gain block family, and the blocks deliver similar noise figures.
New features include flatter gain, a gain slope of 0.5 dB,
improved P
(also not at high P
` Internally matched at 50 Ω
` Gain slope 0.5 dB
` Single supply current
` Reverse isolation: >30 dB up to 2 GHz
` Best-in-class linearity vs current consumption
` Noise figure: 4 to 6 dB at 1 GHz
` Unconditionally stable (K > 1)
` High compression point models work without output inductor
` 6-pin SOT363 plastic SMD package
These products – the BFU725F/N1 transistor for LNA and
mixer applications, and the BGA28xx series of MMICs
for IF amplifiers – are the most recent additions to NXP’s
- At 3.3 V or 5 V
1dB
vs. I
1dB
cc
, and no necessity of an output inductor
models).
st
stage & output stage)