BLF7G22L-130,118 NXP Semiconductors, BLF7G22L-130,118 Datasheet - Page 39

• Manufacturer Part Number: BLF7G22L-130,118
• Description: TRANSISTOR PWR LDMOS SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22L-130,118

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Power - Output: 30W
• Package / Case: SOT502A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063499118

2.2
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGe:C microwave
NPN transistors, you get high switching frequencies plus extremely high gain and low noise. All this
in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 30 GHz.
Benefits
` Plastic surface-mount SOT343F package
` SiGe:C process delivers high switching frequency from
` Cost-effective alternative to GaAs devices
` RoHS compliant
Applications
` Low noise amplifier (LNA) for microwave communications
` 2
` GPS systems
` Satellite radio
` WLAN/WiMAX and CDMA applications, LTE
` DVB, CMMB
a silicon-based device
systems
low-noise blocks (LNBs)
nd
stage LNA and mixer in direct broadcast satellite (DBS)
Always the right match with our latest 6
wideband transistors
The NPN microwave transistors deliver an unbeatable blend of
high switching frequency, high gain and very low noise. Thanks
to the ultra-low noise figures, they are perfect for your sensitive
RF receivers particularly those for high-performance cell
phones. Alternatively, with the high cut-off frequencies, they
are your ideal solution for microwave applications in the 10 GHz
to 30 GHz range, such as satellite TV receivers and automotive
collision avoidance radar.
These new 6th and 7th generation SiGe:C wideband transistors
get their outstanding performance from our innovative silicon-
germanium-carbon (SiGe:C) BiCMOS process. QUBiC4X was
designed specifically to meet the needs of real-life, high-
frequency applications and delivers an unrivalled fusion of
high power gain and excellent dynamic range. It combines the
performance of gallium-arsenide (GaAs) technologies with the
reliability of a silicon-based process. In addition, with these
transistors, you don’t need a biasing IC or negative biasing
voltage. So it’s a much more cost-effective solution than GaAs
pHEMT devices.
Full portfolio overview of 6
wideband transistors at chapter 3.3.1
th
and 7
th
generation SiGe:C
NXP Semiconductors RF Manual 14
th
and 7
th
generation RF
th
edition
41