MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 18

• Manufacturer Part Number: MRF1535FNT1
• Description: IC MOSFET RF N-CHAN TO272-6
• Manufacturer: Freescale Semiconductor

Specifications of MRF1535FNT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13.5dB
• Voltage - Rated: 40V
• Current Rating: 6A
• Current - Test: 500mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: TO-272-6
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 6A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W
• Power Gain (typ)@vds: 13.5dB
• Frequency (min): 135MHz
• Frequency (max): 520MHz
• Package Type: TO-272 EP
• Pin Count: 6
• Drain Source Resistance (max): 700@5Vmohm
• Input Capacitance (typ)@vds: 250(Max)@12.5VpF
• Output Capacitance (typ)@vds: 150(Max)@12.5VpF
• Reverse Capacitance (typ): 20(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 135000mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

Application Notes
• AN211A: Field Effect Transistors in Theory and Practice
• AN215A: RF Small - Signal Design Using Two - Port Parameters
• AN721: Impedance Matching Networks Applied to RF Power Transistors
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MRF1535NT1 MRF1535FNT1
18
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
11
12
13
June 2008
June 2009
Feb. 2008
Date
• Changed DC Bias I
• Replaced Case Outline 1264 - 09 with 1264 - 10, Issue L, p. 1, 12 - 14. Removed Drain - ID label from top
• Replaced Case Outline 1264A - 02 with 1264A - 03, Issue D, p. 1, 15 - 17. Removed Drain - ID label from
• Added Product Documentation and Revision History, p. 18
• Corrected specified performance values for power gain and efficiency on p. 1 to match typical
• Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
• Added AN1907, Solder Reflow Attach Method for High Power RF Devices in Plastic Packages and
• Added Electromigration MTTF Calculator availability to Product Software, p. 18
view and View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact.
Renamed E2 with E3. Added Pin 7 designation. Corrected positional tolerance for bolt hole radius. Added
JEDEC Standard Package Number.
View Y - Y. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (Changed D2
and E2 dimensions from basic to .604 Min and .162 Min, respectively). Added dimension E3. Added Pin 7
designation. Corrected positional tolerance for bolt hole radius. Added JEDEC Standard Package Number.
performance values in the functional test table on p. 2
process as described in Product and Process Change Notification number, PCN13516, p. 1
AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product
Documentation, Application Notes, p. 18
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
DQ
value from 150 to 500 to match Functional Test I
REVISION HISTORY
Description
DQ
specification, p. 10
Freescale Semiconductor
RF Device Data