MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 8

• Manufacturer Part Number: MRF1535FNT1
• Description: IC MOSFET RF N-CHAN TO272-6
• Manufacturer: Freescale Semiconductor

Specifications of MRF1535FNT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13.5dB
• Voltage - Rated: 40V
• Current Rating: 6A
• Current - Test: 500mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: TO-272-6
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 6A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W
• Power Gain (typ)@vds: 13.5dB
• Frequency (min): 135MHz
• Frequency (max): 520MHz
• Package Type: TO-272 EP
• Pin Count: 6
• Drain Source Resistance (max): 700@5Vmohm
• Input Capacitance (typ)@vds: 250(Max)@12.5VpF
• Output Capacitance (typ)@vds: 150(Max)@12.5VpF
• Reverse Capacitance (typ): 20(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 135000mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF1535NT1 MRF1535FNT1
8
f = 450 MHz
f = 175 MHz
Z
Z
in
OL
Z
Note: Z
* = Complex conjugate of the load
OL
V
MHz
Z
135
155
175
= Complex conjugate of source
*
DD
OL
f
Z
= 12.5 V, I
*
impedance.
impedance at given output power,
voltage, frequency, and η
in
OL
f = 135 MHz
f = 520 MHz
f = 520 MHz
f = 450 MHz
Z
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
o
Figure 20. Series Equivalent Input and Output Impedance
= 10 Ω
5.0 + j0.9
5.0 + j0.9
3.0 + j1.0
DQ
Z
= 250 mA, P
Ω
in
f = 175 MHz
Input
Matching
Network
out
1.7 + j0.2
1.7 + j0.2
1.3 + j0.1
Z
= 35 W
f = 135 MHz
Z
OL
Ω
D
in
Z
*
> 50 %.
in
Device
Under Test
Z
Z
in
OL
Z
OL
* = Complex conjugate of the load
V
MHz
*
450
470
500
520
= Complex conjugate of source
DD
f
= 12.5 V, I
impedance.
impedance at given output power,
voltage, frequency, and η
Output
Matching
Network
0.8 - j1.4
0.9 - j1.4
1.0 - j1.4
0.9 - j1.4
DQ
Z
= 500 mA, P
Ω
in
out
1.0 - j0.8
1.1 - j0.6
1.1 - j0.6
1.1 - j0.5
Z
= 35 W
OL
Ω
D
*
> 50 %.
Freescale Semiconductor
RF Device Data