MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 4

• Manufacturer Part Number: MRF1535FNT1
• Description: IC MOSFET RF N-CHAN TO272-6
• Manufacturer: Freescale Semiconductor

Specifications of MRF1535FNT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13.5dB
• Voltage - Rated: 40V
• Current Rating: 6A
• Current - Test: 500mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: TO-272-6
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 6A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W
• Power Gain (typ)@vds: 13.5dB
• Frequency (min): 135MHz
• Frequency (max): 520MHz
• Package Type: TO-272 EP
• Pin Count: 6
• Drain Source Resistance (max): 700@5Vmohm
• Input Capacitance (typ)@vds: 250(Max)@12.5VpF
• Output Capacitance (typ)@vds: 150(Max)@12.5VpF
• Reverse Capacitance (typ): 20(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 135000mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF1535NT1 MRF1535FNT1
4
19
18
17
16
15
14
13
12
50
45
40
35
30
70
60
50
40
30
20
10
11
200
Figure 6. Output Power versus Biasing Current
10
10
Figure 8. Output Power versus Supply Voltage
Figure 4. Gain versus Output Power
400
20
11
V
135 MHz
DD
P
175 MHz
155 MHz
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
600
12
30
175 MHz
175 MHz
TYPICAL CHARACTERISTICS, 135 - 175 MHz
800
40
13
155 MHz
V
V
P
I
P
DD
DQ
DD
in
in
135 MHz
= 30 dBm
= 30 dBm
= 12.5 Vdc
= 250 mA
= 12.5 Vdc
1000
50
14
155 MHz
135 MHz
1200
60
15
80
70
60
50
40
30
80
70
60
50
40
80
70
60
50
40
Figure 7. Drain Efficiency versus Biasing Current
200
10
10
Figure 5. Drain Efficiency versus Output Power
Figure 9. Drain Efficiency versus Supply Voltage
20
400
11
V
P
I
DD
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
30
, BIASING CURRENT (mA)
155 MHz
175 MHz
135 MHz
175 MHz
600
12
155 MHz
40
135 MHz
175 MHz
155 MHz
50
Freescale Semiconductor
800
13
135 MHz
I
P
60
DQ
V
P
in
DD
in
V
= 30 dBm
RF Device Data
= 250 mA
= 30 dBm
DD
1000
= 12.5 Vdc
14
= 12.5 Vdc
70
1200
80
15