MRF1535FNT1 Freescale Semiconductor, MRF1535FNT1 Datasheet - Page 2

• Manufacturer Part Number: MRF1535FNT1
• Description: IC MOSFET RF N-CHAN TO272-6
• Manufacturer: Freescale Semiconductor

Specifications of MRF1535FNT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13.5dB
• Voltage - Rated: 40V
• Current Rating: 6A
• Current - Test: 500mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: TO-272-6
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 6A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W
• Power Gain (typ)@vds: 13.5dB
• Frequency (min): 135MHz
• Frequency (max): 520MHz
• Package Type: TO-272 EP
• Pin Count: 6
• Drain Source Resistance (max): 700@5Vmohm
• Input Capacitance (typ)@vds: 250(Max)@12.5VpF
• Output Capacitance (typ)@vds: 150(Max)@12.5VpF
• Reverse Capacitance (typ): 20(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 135000mW
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF1535NT1 MRF1535FNT1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain - Source On - Voltage
Drain - Source On - Voltage
Input Capacitance (Includes Input Matching Capacitance)
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
GS
DS
GS
GS
DS
DS
DS
DD
DD
= 60 Vdc, V
= 12.5 Vdc, I
= 12.5 Vdc, V
= 12.5 Vdc, V
= 12.5 Vdc, V
= 0 Vdc, I
= 10 Vdc, V
= 5 Vdc, I
= 10 Vdc, I
= 12.5 Vdc, P
= 12.5 Vdc, P
D
D
D
= 100 μAdc)
= 0.6 A)
GS
DS
D
= 2.0 Adc)
GS
GS
GS
out
out
= 400 μA)
= 0 Vdc)
= 0 Vdc)
= 35 Watts, I
= 35 Watts, I
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
Characteristic
DQ
DQ
(T
= 500 mA)
= 500 mA)
A
= 25°C unless otherwise noted)
f = 520 MHz
f = 520 MHz
V
Symbol
R
V
V
(BR)DSS
I
I
C
DS(on)
DS(on)
C
GS(th)
C
G
DSS
GSS
oss
η
rss
iss
ps
Min
60
—
—
—
—
—
—
—
—
—
1
13.5
Typ
Freescale Semiconductor
—
—
—
—
—
—
—
—
—
55
Max
250
150
0.3
2.6
0.7
20
—
—
—
1
1
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
Ω