MT48LC16M8A2TG-75:G Micron Technology Inc, MT48LC16M8A2TG-75:G Datasheet - Page 49

• Manufacturer Part Number: MT48LC16M8A2TG-75:G
• Description: DRAM Chip SDRAM 128M-Bit 16Mx8 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC16M8A2TG-75:G

• Package: 54TSOP-II
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C

Table 14:
Table 15:
Table 16:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
Parameter/Condition
Parameter/Condition
Parameter – TSOP “TG” Package
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
pins not under test = 0V)
Output leakage current: DQ are disabled; 0V ≤ V
Output levels:
Output high voltage (I
Output low voltage (I
Operating current: Active mode;
Burst = 2; READ or WRITE;
Standby current: Power-down mode;
All banks idle; CKE = LOW
Standby current: Active mode;
CKE = HIGH; CS# = HIGH; All banks active after
accesses in progress
Operating current: Burst mode; Page burst;
READ or WRITE; All banks active
Auto refresh current:
CKE = HIGH; CS# = HIGH
Self refresh current:
CKE ≤ 0.2V
Input capacitance: CLK
Input capacitance: All other input-only pins
Input/output capacitance: DQ
Parameter – FBGA “FB”
Input capacitance: CLK
Input capacitance: All other input-only pins
DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 51; V
I
Notes: 1, 5, 6, 11, 13; notes appear on page 51; V
Capacitance
Note: 2; notes appear on page 51
DD
Specifications and Conditions
OUT
OUT
= 4mA)
= –4mA)
t
RC =
t
RC (MIN)
IN
≤ V
DD
t
t
t
Standard
Low power (L)
RFC =
RFC = 15.625µs
RFC = 3.906µs(AT)
t
RCD met; No
(All other
OUT
≤ V
t
RFC (MIN)
DD
DD
/V
Q
49
DD
Q = +3.3 ±0.3V
DD
V
/V
Symbol
DD
Symbol
Symbol
DD
V
V
V
I
V
/V
OZ
I
I
I
I
I
I
I
I
I
OH
I
OL
IH
C
Q = +3.3 ±0.3V
DD
DD
DD
DD
DD
DD
DD
DD
DD
C
C
C
C
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
I
I
IO
I
I
1
2
1
2
1
2
3
4
5
6
6
7
7
Q
-6A
170
165
330
50
Min
Min
–0.3
2
3
6
2
–
2.4
2.5
2.5
4.0
1.5
1.5
–5
–5
3
2
–
128Mb: x4, x8, x16 SDRAM
Max
160
165
330
-7E
50
2
3
6
2
1
Electrical Specifications
V
DD
Max
Max
3.6
0.8
0.4
3.5
3.8
6.0
3.5
3.8
5
5
–
+ 0.3
©1999 Micron Technology, Inc. All rights reserved.
150
150
310
-75
50
2
3
6
2
1
Units
Units
µA
µA
pF
pF
pF
pF
pF
V
V
V
V
V
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
Notes
18, 19,
Notes
19, 32
19, 32
19, 32
32, 33
3, 18,
3, 12,
3, 18,
3, 12,
22
22
29
30
31
34
35
32
4