NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 22

• Manufacturer Part Number: NAND256W3A2BN6F
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6F

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

Command set
5
22/59
Command set
All bus write operations to the device are interpreted by the command interface. The
commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when
the Command Latch Enable signal is High. Device operations are selected by writing
specific commands to the command register. The two-step command sequences for
program and erase operations are imposed to maximize data security.
The commands are summarized in
Table 9.
1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or
2. Any undefined command sequence is ignored by the device.
Read A
Read B
Read C
Read Electronic Signature
Read Status Register
Page Program
Copy Back Program
Block Erase
Reset
input/output data are not shown.
Command
Commands
1
st
01h
FFh
00h
50h
90h
70h
80h
00h
60h
cycle
Table
(2)
Bus write operations
9.
2
nd
D0h
8Ah
10h
cycle
–
–
–
–
–
–
(1)(2)
3
rd
10h
cycle
–
–
–
–
–
–
–
–
NAND128-A, NAND256-A
Command accepted
during busy
Yes
Yes