NAND256W3A2BN6F NUMONYX, NAND256W3A2BN6F Datasheet - Page 25

• Manufacturer Part Number: NAND256W3A2BN6F
• Manufacturer: NUMONYX

Specifications of NAND256W3A2BN6F

• Cell Type: NAND
• Density: 256Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 25b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 32M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND128-A, NAND256-A
Figure 10. Read (A, B, C) operations
Figure 11. Read block diagrams
1. The highest address depends on the device density.
A9-A26 (1)
A9-A26 (1)
A0-A7
A0-A7
and Chip Enable remains Low, then the next page is automatically loaded into the page
buffer and the read operation continues. A sequential row read operation can only be
used to read within a block. If the block changes a new read command must be issued.
Refer to
block diagrams
sequential row read operation, set to High the Chip Enable signal for more than t
Sequential row read is not available when the Chip Enable don’t care option is enabled.
RB
I/O
CL
AL
W
R
E
Read B command, x8 devices
Read A command, x8 devices
(1st half page)
(1st half page)
Figure 12: Sequential row read operations
Command
01h/ 50h
Area A
Area A
Code
00h/
for details about sequential row read operations. To terminate a
(2nd half page)
(2nd half page)
Area B
Area B
Address Input
Area C
(spare)
Area C
(spare)
tBLBH1
(read)
A9-A26 (1)
A0-A2 (x16)
A0-A3 (x8)
A9-A26 (1)
Busy
A0-A7
Read C command, x8/x16 devices
Read A command, x16 devices
A4-A7 (x8), A3-A7 (x16) are don't care
Area A
Data Output (sequentially)
and
(main area)
Figure 13: Sequential row read
Area A
Area A/ B
Device operations
(spare)
Area C
Area C
(spare)
ai07595c
AI07596
EHEL
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