IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet
IPD26N06S2L35XT
Specifications of IPD26N06S2L35XT
Related parts for IPD26N06S2L35XT
IPD26N06S2L35XT Summary of contents
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OptiMOS ® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source ...
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Parameter 1) Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode ...
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Power dissipation ≥ tot 100 T [° Safe operating area °C; ...
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Typ. output characteristics ° parameter 4 Typ. transfer characteristics ...
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Typ. Drain-source on-state resistance R = f(T ) DS(ON) j parameter -60 - [°C] j ...
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Typical avalanche energy parameter 350 300 250 6.5 A 200 150 13 A 100 100 T [° Typ. drain-source breakdown voltage V ...
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