IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 4

• Manufacturer Part Number: IPD26N06S2L35XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD26N06S2L35XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 68W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
1000
= f(T
100
70
60
50
40
30
20
10
10
0
1
0.1
DS
0
C
); T
); V
p
C
GS
= 25 °C; D = 0
≥ 6 V
50
1
T
V
C
100
DS
[°C]
[V]
1 ms
10
100 µs
150
10 µs
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
35
30
25
20
15
10
10
10
10
5
0
= f(t
10
-1
-2
-3
0
0
C
10
); V
p
-7
)
0.05
0.1
0.01
0.02
GS
single pulse
10
≥ 10 V
p
-6
/T
50
10
-5
10
T
t
100
C
-4
p
[°C]
[s]
10
-3
IPD26N06S2L-35
10
150
-2
10
2006-07-18
-1
200
10
0