IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 2

• Manufacturer Part Number: IPD26N06S2L35XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD26N06S2L35XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 68W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Drain-source on-state resistance
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
1)
D
D
= 1 mA
D
=26 µA
D
GS
GS
DS
=13 A
=13 A
=0 V,
=0 V,
=0 V
2)
min.
1.2
55
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
1.6
34
27
1
1
-
-
-
-
-
IPD26N06S2L-35
max.
100
100
100
2.2
2.0
75
50
47
35
1
-
2006-07-18
Unit
K/W
V
µA
nA
m
mΩ