IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 6

• Manufacturer Part Number: IPD26N06S2L35XT
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD26N06S2L35XT

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.035Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 30A
• Power Dissipation: 68W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 1.0
9 Typ. Drain-source on-state resistance
R
parameter: I
11 Typ. capacitances
C = f(V
DS(ON)
10
10
10
60
55
50
45
40
35
30
25
20
15
10
DS
4
3
2
= f(T
-60
0
); V
D
j
)
GS
= 13 A; V
-20
= 0 V; f = 1 MHz
5
20
10
GS
= 10 V
V
T
DS
j
60
15
[°C]
[V]
100
20
140
25
Coss
Crss
Ciss
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
2.5
1.5
0.5
10
10
10
10
= f(T
2
1
0
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
0.4
= V
175 °C
20
DS
0.6
28 µA
V
T
25 °C
SD
j
0.8
60
[°C]
[V]
140 µA
IPD26N06S2L-35
1
100
1.2
140
2006-07-18
1.4
180
1.6