IPD26N06S2L35XT Infineon Technologies, IPD26N06S2L35XT Datasheet - Page 3

IPD26N06S2L35XT

Manufacturer Part Number
IPD26N06S2L35XT
Description
Manufacturer
Infineon Technologies
Type
Power MOSFETr
Datasheet

Specifications of IPD26N06S2L35XT

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Continuous Drain Current
30A
Power Dissipation
68W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Lead Free Status / Rohs Status
Compliant
Rev. 1.0
1)
2)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
1)
1)
1)
1)
1)
1)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=26 A, R
=25 °C
F
F
page 3
=25 °C
=30 V, I
=30 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=30 V, V
=44 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
2
DS
=26 A,
=I
=I
D
=11
(one layer, 70 µm thick) copper area for drain
GS
=26 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.95
typ.
621
178
4.0
63
18
26
11
10
40
36
5
1
4
-
-
IPD26N06S2L-35
max.
120
1.3
24
30
3
9
-
-
-
-
-
-
-
-
-
-
2006-07-18
Unit
pF
ns
nC
V
A
V
ns
nC

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