BLF245 NXP Semiconductors, BLF245 Datasheet - Page 10

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF245

Manufacturer Part Number
BLF245
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Sep 02
handbook, full pagewidth
VHF power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the epoxy fibre-glass board; the other side is unetched copper and serves as an earth. Earth
connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact
between the copper on the component side and the ground plane.
C1
Fig.14 Component layout for 175 MHz class-B test circuit.
C2
R2
C3
L1
R1
V GG
L2
C4
copper straps
copper straps
copper strap
rivets
10
135
C5
L4
L3
L6
C6
L5
C7
R3
C8
V DD
C9
C10
MGP175
Product specification
72
BLF245

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