BLF245 NXP Semiconductors, BLF245 Datasheet - Page 11

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range

BLF245

Manufacturer Part Number
BLF245
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
P
Fig.15 Input impedance as a function of frequency
L
( )
= 30 W; T
Z i
40
30
20
10
0
20
Fig.17 Definition of MOS impedance.
(series components); typical values.
h
= 25 C; R
Z i
40
DS
= 28 V; I
th mb-h
60
r i
x i
= 0.3 K/W.
DQ
= 50 mA;
Z L
80
MBA379
100
f (MHz)
MGP177
120
11
handbook, halfpage
handbook, halfpage
Class-B operation; V
P
Fig.16 Load impedance as a function of frequency
Class-B operation; V
P
Fig.18 Power gain as a function of frequency;
L
L
(dB)
= 30 W; T
= 30 W; T
( )
G p
Z L
16
12
40
30
20
10
8
4
0
0
20
20
(series components); typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
40
40
DS
DS
= 28 V; I
= 28 V; I
th mb-h
th mb-h
60
60
R L
X L
= 0.3 K/W.
= 0.3 K/W.
DQ
DQ
= 50 mA;
= 50 mA;
80
80
Product specification
100
100
f (MHz)
f (MHz)
BLF245
MGP178
MGP179
120
120

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