BLF245 NXP Semiconductors, BLF245 Datasheet - Page 3

• Manufacturer Part Number: BLF245
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Sep 02
handbook, halfpage
V
V
I
P
T
T
R
R
D
SYMBOL
SYMBOL
stg
j
DS
GS
tot
th j-mb
th mb-h
VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
10
(A)
I D
10
mb
1
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink T
Fig.2 DC SOAR.
10
PARAMETER
PARAMETER
V DS (V)
(2)
DSon
.
MRA921
10
2
3
V
V
T
mb
GS
DS
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
= 0
= 0
P tot
(W)
25 C
T
100
80
60
40
20
mb
mb
CONDITIONS
0
0
= 25 C; P
= 25 C; P
CONDITIONS
Fig.3 Power derating curves.
40
tot
tot
= 68 W
= 68 W
(2)
(1)
80
MIN.
65
VALUE
Product specification
2.6
0.3
120
65
6
68
150
200
T h ( C)
MAX.
20
BLF245
MGP167
160
UNIT
K/W
K/W
V
V
A
W
C
C
UNIT