BLF245 NXP Semiconductors, BLF245 Datasheet - Page 6

• Manufacturer Part Number: BLF245
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Note
1. R1 included.
Ruggedness in class-B operation
The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: T
2003 Sep 02
MODE OF OPERATION
CW, class-B
handbook, halfpage
h
VHF power MOS transistor
= 25 C; R
V
Fig.8
GS
(pF)
C rs
= 0; f = 1 MHz.
20
10
0
0
Feedback capacitance as a function of
drain-source voltage; typical values.
th mb-h
= 0.3 K/W; R1 = 1 k .
10
h
= 25 C; R
(MHz)
175
175
f
th mb-h
20
12.5
V DS (V)
V
(V)
28
= 0.3 K/W; at rated load power.
DS
MRA920
30
(mA)
I
50
50
DQ
(W)
P
30
12
6
L
typ. 15.5
typ. 12
(dB)
G
13
p
typ. 67
typ. 66
(%)
50
D
2.0
2.4
( )
j2.7
j2.5
Z
i
(1)
Product specification
BLF245
3.9
3.8
( )
Z
L
j4.4
j1.3