BLF245 NXP Semiconductors, BLF245 Datasheet - Page 5

• Manufacturer Part Number: BLF245
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Sep 02
handbook, halfpage
VHF power MOS transistor
V
Fig.4
V
Fig.6
handbook, halfpage
(mV/K)
DS
GS
T.C.
R DSon
= 10 V; valid for T
= 10 V; I
( )
6
4
2
0
2
4
6
10
0.8
0.6
0.4
0.2
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
0
D
= 1.5 A.
j
= 25 to 125 C.
40
10
2
80
10
3
I D (mA)
120
MGP168
T j ( C)
MGP170
10
4
160
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
C
(A)
240
200
160
120
I D
= 10 V.
= 0; f = 1 MHz.
12
80
40
8
4
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
10
T j = 25 C
125 C
10
20
C is
C os
V GS (V)
Product specification
30
V DS (V)
BLF245
MGP169
MGP171
20
40