BLF6G22LS-180RN NXP Semiconductors, BLF6G22LS-180RN Datasheet - Page 8

• Manufacturer Part Number: BLF6G22LS-180RN
• Description: 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Fig 9.
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT502B
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
JEDEC
E
U 1
D 1
D
b
0.375
0.364
9.53
9.25
REFERENCES
Rev. 01 — 20 November 2008
E 1
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
BLF6G22(LS)-180RN
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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