HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet
HAF2026RJ
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HAF2026RJ Summary of contents
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... HAF2026RJ Silicon N Channel Power MOS FET Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc ...
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... HAF2026RJ Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Body-drain diode reverse drain current Avalanche current Avalanche energy Cannel dissipation Cannel dissipation Cannel temperature Storage temperature Notes Drive operation: When using the glass epoxy board (FR4 1.6 mm), PW ≤ 10s 2. 2 Drive operation: When using the glass epoxy board (FR4 1.6 mm), PW ≤ ...
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... HAF2026RJ Electrical Characteristics Item Symbol Drain current Drain to source breakdown V (BR)DSS voltage Gate to source breakdown V (BR)GSS voltage V (BR)GSS Gate to source leak current I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(OP)1 I GS(OP)2 Zero gate voltage drain I DSS1 current I DSS2 Gate to source cut off voltage ...
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... HAF2026RJ Main Characteristics Power vs. Temperature Derating 4.0 Test condition. When using the glass epoxy board. (FR4 1.6 mm), (PW ≤ 10s) 3.0 2.0 1 100 Ambient Temperature Ta (°C) Typical Output Characteristics 2.0 1 Drain to Source Voltage V Drain to Saturation Voltage vs. Gate to Source Voltage ...
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... HAF2026RJ Drain to Source On State Resistance vs. Temperature 500 Pulse Test 400 300 200 100 – Case Temperature Tc (°C) Body to Drain Diode Reverse Recovery Time 1000 500 200 100 µ 0.01 0.02 0.05 0.1 Reverse Drain Current I Reverse Drain Current vs ...
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... HAF2026RJ Gate to Source Voltage vs. Shutdown Time of Load-Short Test 0.001 0.01 Shutdown Time of Lord-Short Test Avalanche Energy vs. Channel Temperature Derating 2.0 1 100 Channel Temperature Tch (°C) Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Rev.2.00 Jun 02, 2006 ...
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... HAF2026RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.2.00 ...
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... Index mark Ordering Information Part Name HAF2026RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jun 02, 2006 page Previous Code MASS[Typ.] FP-8DAV ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...