HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet - Page 4

• Manufacturer Part Number: HAF2026RJ
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF2026RJ
Main Characteristics
Rev.2.00
Jun 02, 2006
200
160
120
2.0
1.6
1.2
0.8
0.4
4.0
3.0
2.0
1.0
80
40
0
0
0
Drain to Source Voltage V
Gate to Source Voltage V
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
Power vs. Temperature Derating
Ambient Temperature Ta (°C)
Drain to Saturation Voltage vs.
V
Typical Output Characteristics
10 V
GS
5 V
Gate to Source Voltage
2
2
= 3.5 V
50
page 4 of 8
4
4
100
6
6
Pulse Test
Pulse Test
150
I
D
8
= 0.5 A
8
GS
DS
0.2 A
(V)
(V)
200
10
10
0.03
0.01
1.0
0.8
0.6
0.4
0.2
500
200
100
0.3
0.1
50
20
10
10
0.01
0.01 0.02
Static Drain to Source State Resistance
3
1
0
Note 6:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Ta = 25°C
1 shot Pulse
1 Driver Operation
Gate to Source Voltage V
V
Typical Transfer Characteristics
Pulse Test
0.03
Drain Source Voltage V
Maximum Safe Operation Area
DS
= 10 V
1
Operation
in this area
is limited by R
Drain Current I
0.1
0.05 0.1 0.2
vs. Drain Current
25°C
75°C
0.3
2
Thermal shut down
operation area
V
1
V
DS(on)
GS
GS
3
= 10 V
3
= 5 V
Tc = -25°C
D
Pulse Test
0.5
(A)
10
DS
4
GS
30 100
1
(V)
1 ms
(V)
2
5