HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet - Page 7

• Manufacturer Part Number: HAF2026RJ
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF2026RJ
Rev.2.00
Jun 02, 2006
Vin
5 V
Switching Time Test Circuit
Vin Monitor
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
10 µ
10 µ
1
1
50 Ω
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
0.5
100 µ
100 µ
page 7 of 8
D.U.T.
1 m
1 m
R
V
= 30 V
L
DD
Vout
Monitor
10 m
10 m
Pulse Width PW (S)
Pulse Width PW (S)
100 m
100 m
1
1
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
P
P
θch-f(t) = γs (t) • θch - f
θch-f = 125°C/W, Ta = 25°C
θch-f(t) = γs (t) • θch - f
θch-f = 166°C/W, Ta = 25°C
DM
DM
t d(on)
Vout
Vin
10
10
Switching Time Waveform
10%
PW
PW
T
T
10%
100
100
90%
t r
1000
1000
D =
D =
t d(off)
PW
PW
T
T
10000
10000
90%
90%
10%
t f