HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet - Page 2

• Manufacturer Part Number: HAF2026RJ
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF2026RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Cannel dissipation
Cannel dissipation
Cannel temperature
Storage temperature
Notes: 1. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Typical Operation Characteristics
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current (Current limitation)
Rev.2.00
2. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Tc = 25 C, Rg
Jun 02, 2006
Item
Item
page 2 of 8
50
Symbol
I
I
I
IH(sd)1
IH(sd)2
Vop
Tsd
D limt
V
I
I
V
I
IH1
IH2
IL
IH
IL
Symbol
Pch
Pch
E
I
AP
V
V
V
AR
Tstg
Tch
Min
I
3.5
3.5
0.6
—
—
—
—
—
—
—
DSS
GSS
GSS
I
DR
Note3
D
Note3
Note1
Note2
0.53
0.23
Typ
175
—
—
—
—
—
—
—
Max
100
1.2
1.0
50
12
—
—
—
—
1
–55 to +150
Ratings
–2.5
1.54
150
0.6
0.6
1.5
60
16
1
1
Unit
mA
mA
V
V
V
A
C
A
A
A
Vi = 8 V, V
Vi = 3.5 V, V
Vi = 1.2 V, V
Vi = 8 V, V
Vi = 3.5 V, V
Cannel temperature
Vi = 5 V, V
Test Conditions
DS
DS
DS
DS
DS
DS
= 0
= 0
= 3 V
= 0
= 0
= 0
Unit
mJ
W
W
V
V
V
A
A
A
C
C
(Ta = 25°C)
(Ta=25°C)