HAF2026RJ Renesas Electronics Corporation., HAF2026RJ Datasheet - Page 5

• Manufacturer Part Number: HAF2026RJ
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAF2026RJ
Rev.2.00
Jun 02, 2006
1000
500
200
100
500
400
300
200
100
1.0
0.8
0.6
0.4
0.2
50
20
10
–25
5
2
1
0.01 0.02
0
0
Drain to Source On State Resistance
Source to Drain Voltage V
Pulse Test
Pulse Test
Reverse Drain Current I
Body to Drain Diode Reverse
V
Case Temperature Tc (°C)
V
GS
Reverse Drain Current vs.
0
GS
V
Source to Drain Voltage
0.2
GS
= 5 V
= 10 V
25
= 5 V
vs. Temperature
page 5 of 8
Recovery Time
0.05
0.4
50
0.1
di / dt = 50 A / µs
V
I
GS
D
75
0.6
I
= 0.5 A, 0.2 A
D
= 0, Ta = 25°C
0.2
= 0.5 A, 0.2 A
100 125 150
DR
0.8
SD
0.5
0 V
(A)
(V)
1.0
1
0.003
0.001
1000
0.03
0.01
100
100
0.3
0.1
0.3
0.1
10
30
10
10
0.001 0.003 0.01 0.03
0.01
3
1
3
1
1
0
V
Pulse Test
V
PW = 300 µs, duty < 1 %
Forward Transfer Admittance vs.
V
f = 1 MHz
DS
GS
GS
=10 V
Drain to Source V
= 5 V, V
Switching Characteristics
10
Drain to Source Voltage
= 0
0.03
Typical capacitance vs.
Drain Current I
Drain Current I
Drain Current
20
DD
= 30 V
0.1
75°C
30
Tc = –25°C
0.1
D
D
DS
0.3
25°C
(A)
(A)
40
(V)
0.3
t
t r
d(on)
t
d(off)
t f
50
1
1