2SB552 Quanzhou Jinmei Electronic, 2SB552 Datasheet

2SB552

Manufacturer Part Number

2SB552

Description

Silicon PNP Power Transistors

Manufacturer

Quanzhou Jinmei Electronic

Datasheet

1.2SB552.pdf (3 pages)

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Silicon PNP Power Transistors

DESCRIPTION

・With TO-3 package

・Complement to type 2SD552

APPLICATIONS

・Power amplifier applications

・Power switching applications

・DC-DC converters

PINNING(see Fig.2)

Absolute maximum ratings(Ta=

JMnic

SYMBOL

CBO

CEO

EBO

stg

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

CONDITIONS

Fig.1 simplified outline (TO-3) and symbol

Product Specification

-55~200

VALUE

-220

-180

150

-15

-5

-4

2SB552

UNIT

℃

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2SB552 Summary of contents

Page 1

... B P Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-3) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SB552 VALUE UNIT -220 V -180 - 150 W ℃ 150 ℃ -55~200 ...

Page 2

... Transition frequency T CONDITIONS I =-25mA ; =-10A =-10A =-220V =- =-10V;f=1.0MHz =- =-10V Product Specification 2SB552 MIN TYP. MAX UNIT -180 V -2.0 V -2.5 V -0 300 pF 3.5 MHz ...

Page 3

... JMnic Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) Product Specification 3 2SB552 ...

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