2SB509 Quanzhou Jinmei Electronic, 2SB509 Datasheet

2SB509

Manufacturer Part Number

2SB509

Description

Silicon PNP Power Transistors

Manufacturer

Quanzhou Jinmei Electronic

Datasheet

1.2SB509.pdf (3 pages)

Current page: 1 of 3
Download datasheet (128Kb)

Silicon PNP Power Transistors

DESCRIPTION

・With TO-66 package

・Complement to type 2SD315

APPLICATIONS

・For use in audio frequency power

PINNING(see Fig.2)

Absolute maximum ratings(Ta=

JMnic

SYMBOL

amplifier application

CBO

CEO

EBO

stg

Base

Emitter

Collector

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

Collector power dissipation

Junction temperature

Storage temperature

DESCRIPTION

PARAMETER

℃)

Open emitter

Open base

Open collector

=25℃

CONDITIONS

Fig.1 simplified outline (TO-66) and symbol

Product Specification

-40~150

VALUE

150

-60

-10

-5

-4

2SB509

UNIT

℃

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2SB509 Summary of contents

Page 1

... CM P Collector power dissipation C T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-66) and symbol ℃) CONDITIONS Open emitter Open base Open collector T =25℃ C Product Specification 2SB509 VALUE UNIT - ℃ 150 ℃ -40~150 ...

Page 2

... D E 40-80 60-120 100-200 CONDITIONS I =-10mA ; =-2A; I =- =-20V =- =-0. =- =-0. =- 160-320 2 Product Specification 2SB509 MIN TYP. MAX UNIT -60 V -1.0 V -1.5 V -0 320 40 8 MHz ...

Page 3

... JMnic Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Product Specification 2SB509 ...

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