BUK463-60A Philips Semiconductors, BUK463-60A Datasheet - Page 5

no-image

BUK463-60A

Manufacturer Part Number
BUK463-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
July 1995
PowerMOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
I
F
GS
50
40
30
20
10
12
10
= f(V
0
8
6
4
2
0
= f(Q
Fig.14. Typical reverse diode current.
0
0
IF / A
VGS / V
SDS
G
); conditions: I
); conditions: V
Tj / C =
150
VSDS / V
QG / nC
D
10
1
GS
= 22 A; parameter V
= 0 V; parameter T
VDS / V =10
25
BUK453-50A
BUK453-50
40
20
2
DS
j
5
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
DSS
40
% = f(T
RGS
0.5 LI
60
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
VDS
120
BV
T.U.T.
BUK463-60A/B
Product Specification
DSS
140
D
shunt
= 22 A
R 01
V
DD
160
-
+
Rev 1.000
-ID/100
180
VDD

Related parts for BUK463-60A