BUK463-60A Philips Semiconductors, BUK463-60A Datasheet - Page 4

• Manufacturer Part Number: BUK463-60A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
July 1995
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
Fig.8. Typical transconductance, T
2.0
1.5
1.0
0.5
40
30
20
10
8
7
6
5
4
3
2
1
0
= f(V
0
0
-60
0
Fig.7. Typical transfer characteristics.
gfs / S
0
DS(ON)
a
ID / A
GS
g
2
) ; conditions: V
fs
Tj / C =
/R
-20
= f(I
DS(ON)25 ˚C
10
4
D
); conditions: V
6
20
= f(T
8
25
20
VGS / V
ID / A
Tj / C
10
60
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
12
D
= 10 A; V
150
30
100
DS
14
= 25 V
BUK453-50A
BUK453-50A
16
140
j
= 25 ˚C .
40
GS
18
= 10 V
180
20
j
4
V
Fig.12. Typical capacitances, C
10000
C = f(V
4
3
2
1
0
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
D
-60
100
10
VGS(TO) / V
= f(V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
GS)
DS
-20
); conditions: V
; conditions: T
j
); conditions: I
1
20
2 %
max.
typ.
min.
20
Tj / C
SUB-THRESHOLD CONDUCTION
VDS / V
60
2
VGS / V
j
GS
= 25 ˚C; V
D
= 1 mA; V
= 0 V; f = 1 MHz
BUK463-60A/B
typ
100
Product Specification
3
iss
, C
140
98 %
40
DS
BUK4y3-50
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.000
180
GS
rss
GS
.