BUK463-60A Philips Semiconductors, BUK463-60A Datasheet - Page 3

no-image

BUK463-60A

Manufacturer Part Number
BUK463-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
July 1995
PowerMOS transistor
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
& I
0
Fig.3. Safe operating area. T
1000
Fig.1. Normalised power dissipation.
100
0
0
PD%
ID%
10
DM
1
1
ID / A
= f(V
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
); I
60
60
= f(T
DM
10
DC
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
VDS / V
/P
); conditions: V
B
A
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
100
120
120
100 us
1 ms
10 ms
100 ms
tp = 10 us
= f(T
mb
140
140
BUK453-60
mb
= 25 ˚C
)
160
160
GS
180
180
10 V
p
3
Fig.5. Typical output characteristics, T
1E+01
1E+00
Fig.6. Typical on-state resistance, T
1E-01
1E-02
0.5
0.4
0.3
0.2
0.1
45
30
15
0
0
0
1E-07
0
ID / A
RDS(ON) / Ohm
Fig.4. Transient thermal impedance.
4
Zth j-mb / (K/W)
0.05
0.02
Z
0.5
0.2
0.1
R
th j-mb
0
I
DS(ON)
4.5
D
5
2
= f(V
20
1E-05
10
= f(t); parameter D = t
5.5 6
= f(I
15
DS
); parameter V
4
D
); parameter V
10
VDS / V
ID / A
1E-03
6.5
t / s
20
P
D
7
6
BUK463-60A/B
Product Specification
t p
7.5
VGS / V =
T
1E-01
VGS / V =
30
GS
BUK453-50A
BUK453-50A
GS
D =
p
8
8
/T
ZTHX53
j
j
= 25 ˚C .
t
T
p
t
= 25 ˚C .
Rev 1.000
1E+01
20
10
8
7
6
5
4
10
40

Related parts for BUK463-60A