PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet
PBSS8110Y
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PBSS8110Y Summary of contents
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... PBSS8110Y 100 NPN low V Rev. 01 — 2 June 2004 1. Product profile 1.1 General description NPN low V 1.2 Features SOT363 package Low collector-emitter saturation voltage V High collector current capability I High efficiency reduces heat generation. 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial ...
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... Marking Limiting values Parameter collector-base voltage collector-emitter voltage emitter-base voltage peak collector current continuous collector current continuous base current total power dissipation Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V CEsat Simplified outline Symbol SOT363 ...
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... Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to soldering point Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat Min Max - 150 65 +150 65 +150 2 collector mounting 2 collector mounting ...
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... Fig 2. Transient thermal impedance as a function of pulse time; typical values. 9397 750 12567 Product data sheet Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat 001aaa798 (s) p © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... 250 0 Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat Min Typ Max - - 100 - - 100 - - 100 150 - ...
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... MHz 001aaa497 1000 V BE (mV) 800 600 400 200 (mA) C (1) T (2) T (3) T Fig 5. Base-emitter voltage as a function of collector Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat Min Typ Max - - 120 - - 200 [1] - 160 200 - - 1.05 ...
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... I (mA) C (1) T (2) T (3) T Fig 9. Base-emitter saturation voltage as a function of Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V CEsat 20 amb function of collector current; typical values. ...
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... C Fig 11. Base-emitter saturation voltage as a function of 001aaa496 R CEsat ( ) (V) CE (1) T (2) T (3) T Fig 13. Equivalent on-resistance as a function of Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V CEsat 800 600 400 50 amb collector current ...
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... Product data sheet 001aaa502 10 R CEsat ( ) (mA) C Fig 15. Equivalent on-resistance as a function of Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V CEsat 50 amb collector current ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-88 Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V CEsat detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... PBSS8110Y_1 20040602 9397 750 12567 Product data sheet Data sheet status Change notice Product data - Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat Order number Supersedes 9397 750 12567 - © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Rev. 01 — 2 June 2004 PBSS8110Y 100 NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 12 PBSS8110Y 100 NPN low V © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...