PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 7

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 12567
Product data sheet
Fig 6. Collector-emitter saturation voltage as a
Fig 8. Collector-emitter saturation voltage as a
V
V
(mV)
(mV)
(1) T
(2) T
(3) T
CEsat
CEsat
10
10
10
10
10
10
10
3
2
10
4
3
2
10
I
function of collector current; typical values.
I
function of collector current; typical values.
C
C
amb
amb
amb
/I
/I
1
1
B
B
= 10.
= 50; T
= 100 C.
= 25 C.
= 55 C.
1
1
amb
= 25 C.
10
10
(1)
(2)
(3)
10
10
2
2
10
10
001aaa504
001aaa506
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 2 June 2004
4
4
Fig 7. Collector-emitter saturation voltage as a
Fig 9. Base-emitter saturation voltage as a function of
V
V
(mV)
(mV)
(1) T
(2) T
(3) T
CEsat
BEsat
1200
1000
800
600
400
200
10
10
10
3
2
10
10
I
function of collector current; typical values.
I
collector current; typical values.
C
C
amb
amb
amb
/I
/I
100 V, 1 A NPN low V
1
1
B
B
= 20; T
= 10.
= 55 C.
= 25 C.
= 100 C.
1
1
amb
= 25 C.
10
10
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
10
PBSS8110Y
2
2
CEsat
10
10
(BISS) transistor
001aaa505
3
001aaa498
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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