PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 8

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 12567
Product data sheet
Fig 10. Base-emitter saturation voltage as a function of
Fig 12. Collector current as a function of
(10) I
V
(mV)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
BEsat
(A)
1200
1000
I
C
800
600
400
1.6
1.2
0.8
0.4
2
0
10
I
collector current; typical values.
T
collector-emitter voltage; typical values.
C
B
B
B
B
B
B
B
B
B
B
0
amb
/I
= 35 mA.
= 31.5 mA.
= 28 mA.
= 24.5 mA.
= 21 mA.
= 17.5 mA.
= 14 mA.
= 10.5 mA.
= 7 mA.
= 3.5 mA.
1
B
= 20; T
= 25 C.
1
1
amb
= 25 C.
10
2
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
10
3
2
10
4
001aaa499
001aaa496
3
I
V
C
CE
(mA)
(V)
10
5
Rev. 01 — 2 June 2004
4
Fig 11. Base-emitter saturation voltage as a function of
Fig 13. Equivalent on-resistance as a function of
V
R
(mV)
(1) T
(2) T
(3) T
BEsat
CEsat
( )
1000
10
800
600
400
10
10
10
1
10
3
2
1
10
I
collector current; typical values.
I
collector current; typical values.
C
C
amb
amb
amb
/I
/I
100 V, 1 A NPN low V
1
1
B
B
= 50; T
= 10.
= 100 C.
= 25 C.
= 55 C.
1
1
amb
= 25 C.
10
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
10
PBSS8110Y
2
2
CEsat
10
10
(BISS) transistor
001aaa500
3
001aaa501
3
I
I
C
C
(mA)
(mA)
(1)
(2)
(3)
10
10
4
4
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