PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 3

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
6. Thermal characteristics
9397 750 12567
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6:
[1]
[2]
[3]
Symbol
T
T
T
Symbol
R
R
Fig 1. Power derating curves.
j
amb
stg
th(j-a)
th(j-s)
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1 cm
pad.
Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6 cm
pad.
(1) 1 cm
(2) Standard footprint.
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to soldering point
2
Parameter
junction temperature
operating ambient
temperature
storage temperature
collector mounting pad.
(mW)
P
tot
600
400
200
Rev. 01 — 2 June 2004
0
…continued
0
40
(1)
(2)
Conditions
100 V, 1 A NPN low V
80
Conditions
in free air
in free air
120
T
amb
001aaa796
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
Min
-
65
65
160
PBSS8110Y
[1]
[2]
[3]
[1]
CEsat
Typ
431
260
200
85
Max
150
+150
+150
(BISS) transistor
2
2
2
2
collector mounting
collector mounting
collector mounting
collector mounting
Unit
K/W
K/W
K/W
K/W
Unit
C
C
C
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