PBSS8110Y Philips Semiconductors, PBSS8110Y Datasheet - Page 2

• Manufacturer Part Number: PBSS8110Y
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
9397 750 12567
Product data sheet
Table 2:
Table 3:
Table 4:
[1]
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1, 2, 5, 6
3
4
Type number
PBSS8110Y
Type number
PPBSS8110Y
Symbol
V
V
V
I
I
I
P
CM
C
B
CBO
CEO
EBO
tot
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
Discrete pinning
Ordering information
Marking
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
continuous collector current
continuous base current
total power dissipation
Description
collector
base
emitter
Package
Name
-
Rev. 01 — 2 June 2004
Description
plastic surface mounted package; 6 leads
Conditions
open emitter
open base
open collector
T
T
j(max)
amb
100 V, 1 A NPN low V
Marking code
81*
25 C
Simplified outline
6
1
[1]
[2]
[3]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5
2
[1]
Min
-
-
-
-
-
-
-
-
-
SOT363
4
3
PBSS8110Y
CEsat
Symbol
Max
120
100
5
3
1
0.3
290
480
625
(BISS) transistor
3
1, 2, 5, 6
sym014
Unit
V
V
V
A
A
A
mW
mW
mW
4
Version
SOT363
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