tmp88f846ug TOSHIBA Semiconductor CORPORATION, tmp88f846ug Datasheet - Page 192

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tmp88f846ug

Manufacturer Part Number
tmp88f846ug
Description
8 Bit Microcontroller
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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18.1 Flash Memory Control
18. Flash Memory
18.1 Flash Memory Control
Flash Memory Control Register
(01FFFH)
18.1.1 Flash Memory Command Sequence Execution Control (FLSCR<FLSMD>)
FLSCR
resister (FLSSTB).
The flash memory is controlled via the flash memory control register (FLSCR) and flash memory stanby control
Note 1: The command sequence of the flash memory can be executed only when FLSCR<FLSMD>="0011B". In other cases, any
Note 2: FLSCR<FLSMD> must be set to either "1100B" or "0011B".
Note 3: Bits 3 to 0 in FLSCR register are always read as don’t care.
ation. This write protection feature is realized by disabling flash memory command sequence execution via the
flash memory control register (write protect). To enable command sequence execution, set FLSCR<FLSMD>
to “0011B”. To disable command sequence execution, set FLSCR<FLSMD> to “1100B”. After reset,
FLSCR<FLSMD> is initialized to “1100B” to disable command sequence execution. Normally,
FLSCR<FLSMD> should be set to “1100B” except when the flash memory needs to be written or erased.
The flash memory can be protected from inadvertent write due to program error or microcontroller misoper-
FLSMD
attempts to execute the command sequence are ineffective.
7
Flash memory command sequence exe-
cution control
6
FLSMD
5
4
Page 182
3
1100: Disable command sequence execution
0011: Enable command sequence execution
Others: Reserved
2
1
0
(Initial value : 1100 ****)
TMP88F846UG
R/W

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