as7c33256ntf3236a ETC-unknow, as7c33256ntf3236a Datasheet - Page 7

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as7c33256ntf3236a

Manufacturer Part Number
as7c33256ntf3236a
Description
Manufacturer
ETC-unknow
Datasheet
State Diagram for NTD SRAM
Absolute maximum ratings
1 Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions at 3.3V I/O
Recommended operating conditions at 2.5V I/O
Parameter
Power supply voltage relative to GND
Input voltage relative to GND (input pins)
Input voltage relative to GND (I/O pins)
Power dissipation
DC output current
Storage temperature (plastic)
Temperature under bias (Junction)
Supply voltage for inputs
Supply voltage for I/O
Ground supply
Supply voltage for inputs
Supply voltage for I/O
Ground supply
11/8/04, v. 1.1
Parameter
Parameter
Write
Read
1
Write
Read
Symbol
Symbol
V
V
Alliance Semiconductor
V
V
Vss
Vss
DDQ
DDQ
DD
DD
Write
Burst
V
Read
Burst
DD
Symbol
I
T
V
V
T
OUT
P
, V
bias
stg
IN
IN
D
DDQ
®
Burst
Write
Burst
Read
Dsel
3.135
3.135
3.135
2.375
Min
Min
0
0
Min
–0.5
–0.5
–0.5
–65
–65
Dsel
Burst
Burst
Burst
Nominal
Nominal
3.3
3.3
3.3
2.5
0
0
V
V
DDQ
DD
AS7C33256NTF32A
AS7C33256NTF36A
+150
+150
Max
+4.6
1.8
50
+ 0.5
+ 0.5
3.465
3.465
3.465
2.625
Max
Max
0
0
P. 7 of 18
Unit
mA
o
o
W
V
V
V
C
C
Unit
Unit
V
V
V
V
V
V

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