PSMN9R0-30YL_10 NXP [NXP Semiconductors], PSMN9R0-30YL_10 Datasheet - Page 4
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PSMN9R0-30YL_10
Manufacturer Part Number
PSMN9R0-30YL_10
Description
N-channel TrenchMOS logic level FET
Manufacturer
NXP [NXP Semiconductors]
Datasheet
1.PSMN9R0-30YL_10.pdf
(14 pages)
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5. Thermal characteristics
Table 5.
PSMN9R0-30YL_3
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
10
10
th(j-mb)
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.2
0.05
0.1
0.02
Thermal characteristics
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 03 — 5 January 2010
Conditions
see
10
Figure 4
-3
10
N-channel TrenchMOS logic level FET
-2
PSMN9R0-30YL
Min
-
10
P
-1
Typ
1.9
t
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aac544
δ =
Max
2.7
t
T
p
t
1
Unit
K/W
4 of 14
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