PSMN9R0-30YL_10 NXP [NXP Semiconductors], PSMN9R0-30YL_10 Datasheet - Page 7

• Manufacturer Part Number: PSMN9R0-30YL_10
• Description: N-channel TrenchMOS logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PSMN9R0-30YL_3
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(pF)
1800
1600
1400
1200
1000
10
10
10
10
10
10
C
(A)
800
I
D
-1
-2
-3
-4
-5
-6
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
2
0
4
min
1
6
C
C
iss
rss
typ
2
8
V
All information provided in this document is subject to legal disclaimers.
V
GS
003aab271
003aac542
GS
max
(V)
(V)
10
Rev. 03 — 5 January 2010
3
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
12
10
8
6
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
N-channel TrenchMOS logic level FET
4
0
PSMN9R0-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2010. All rights reserved.
V
003aac537
003a a c337
T
GS
j
(°C)
(V)
180
10
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