PSMN9R0-30YL_10 NXP [NXP Semiconductors], PSMN9R0-30YL_10 Datasheet - Page 6

• Manufacturer Part Number: PSMN9R0-30YL_10
• Description: N-channel TrenchMOS logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
Table 6.
[1]
PSMN9R0-30YL_3
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
(S)
g
(A)
80
I
60
40
20
60
50
40
30
fs
D
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
5
10
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4.5
3.5
10
2
15
4
…continued
20
6
Conditions
I
I
V
S
S
DS
= 25 A; V
= 20 A; dI
V
GS
25
All information provided in this document is subject to legal disclaimers.
= 20 V
8
003aac534
003aac539
(V) = 3
V
I
DS
D
(A)
2.8
2.6
2.4
2.2
(V)
GS
10
30
Rev. 03 — 5 January 2010
S
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C; see
Fig 6.
Fig 8.
R
(mΩ)
GS
(A)
DSon
I
14
12
10
60
D
40
20
8
6
4
0
= 0 V;
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Figure 17
V
GS
N-channel TrenchMOS logic level FET
(V) = 3.5
1
T
j
20
= 150 °C
PSMN9R0-30YL
Min
-
-
-
2
Typ
0.88
26
16
40
25 °C
3
© NXP B.V. 2010. All rights reserved.
7.5
4.5
10
I
D
V
003aac535
003aac546
(A)
GS
Max
1.2
-
-
(V)
60
4
Unit
V
ns
nC
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