AP40T03GH_08 A-POWER [Advanced Power Electronics Corp.], AP40T03GH_08 Datasheet

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AP40T03GH_08

Manufacturer Part Number
AP40T03GH_08
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet
1.AP40T03GH_08.pdf (6 pages)
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40T03GJ)
are available for low-profile applications.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
31.25
D
0.25
+25
30
28
24
95
DS(ON)
G
DSS
D
Value
AP40T03GH/J
62.5
110
S
4
G D
S
TO-252(H)
TO-251(J)
25mΩ
200807183
Units
W/℃
Units
℃/W
℃/W
℃/W
30V
28A
W
℃
℃
V
V
A
A
A
1

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AP40T03GH_08 Summary of contents

Page 1

Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 ...

Page 2

AP40T03GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...

Page 3

T = 0.0 1.0 2.0 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) ...

Page 4

AP40T03GH =18A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = ...

Page 5

ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 40T03GH YWWSSS 0.127~0.381 C Part Number LOGO Date Code (YWWSSS) ...

Page 6

ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 Part Marking Information & Packing : TO-251 40T03GJ LOGO YWWSSS Part Number Date Code (YWWSSS) Y ：Last Digit Of ...

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