AP60L02GS A-POWER [Advanced Power Electronics Corp.], AP60L02GS Datasheet
AP60L02GS
Related parts for AP60L02GS
AP60L02GS Summary of contents
Page 1
... Symbol Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60L02GS/P Pb Free Plating Product BV 25V DSS R 12mΩ DS(ON) I 50A TO-263( TO-220( Rating ...
Page 2
... AP60L02GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... V =6. =4. Fig 2. Typical Output Characteristics 1.8 I =25A D =25 ℃ ℃ ℃ ℃ 1 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance AP60L02GS/P o =150 Drain-to-Source Voltage ( =25A D V =10V 100 o ...
Page 4
... AP60L02GS Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 = Single Pulse (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 10us 100us 0.1 1ms 10ms 100ms 0 ...
Page 5
... 0.1 0.1 0.3 0.5 0.7 0.9 V (V) SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics = -50 1.1 1.3 1.5 Fig 12. Gate Threshold Voltage v.s. AP60L02GS/P f=1.0MHz Ciss Coss Crss ( 100 Junction Temperature Junction Temperature 150 ...
Page 6
... AP60L02GS Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6x RATED THE OSCILLOSCOPE 5V 0.8 x RATED d(on) r Fig 14. Switching Time Waveform ...