AP1332EU A-POWER [Advanced Power Electronics Corp.], AP1332EU Datasheet

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... T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-323 G Parameter 3 3 1,2 Parameter 3 AP1332EU BV 20V DSS R 600mΩ DS(ON) I 600mA Rating 20 ±6 600 470 2.5 0.35 0.003 W/℃ ...

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... AP1332EU Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1.4 1.2 1.0 0.8 0.6 -50 5 Fig 4. Normalized On-Resistance 2.0 1.5 o =25 C 1.0 0.5 0.0 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP1332EU o 5.0V C 4.5V 3.5V 2.5V V =2.0V G 0.5 1.0 1.5 2 Drain-to-Source Voltage (V) DS =0.6A =4. 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j Junction Temperature 2 ...

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... AP1332EU 12 I =0. =10V DS V =12V =16V 0.0 0.5 1.0 1 Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...