AP4525GEH_08 A-POWER [Advanced Power Electronics Corp.], AP4525GEH_08 Datasheet
AP4525GEH_08
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AP4525GEH_08 Summary of contents
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Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Absolute ...
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AP4525GEH N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source ...
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P-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current ...
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AP4525GEH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 120 I T 100 ...
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N-Channel =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0.1 0 ...
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AP4525GEH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 200 170 140 110 ...
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P-Channel Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 =25 C ...
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ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252(4L Part Marking Information & Packing : TO-252(4L) 4525GEH YWWSSS Part Number LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN ...