AP4407F A-POWER [Advanced Power Electronics Corp.], AP4407F Datasheet
AP4407F
Related parts for AP4407F
AP4407F Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP4407F/I BV -30V DSS R 14mΩ DS(ON) I -50A TO-220FM( TO-220CFM(I) Rating ...
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... AP4407F/I Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... - =25 ℃ ℃ ℃ ℃ C 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance 3.0 2.5 2 1.5 1.0 0.5 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4407F/I -10V o C -8.0V -6.0V -4.5V V =-3. Drain-to-Source Voltage (V) DS =-24A =-10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
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... AP4407F -24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...