RU3710R RUICHIPS [Ruichips Semiconductor Co., Ltd], RU3710R Datasheet - Page 2

• Manufacturer Part Number: RU3710R
• Description: N-Channel Advanced Power MOSFET
• Manufacturer: RUICHIPS [Ruichips Semiconductor Co., Ltd]

Electrical Characteristics
Notes:
Copyright
Rev. C –JAN., 2009
Static Characteristics
R
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Symbol
DS(ON)
BV
V
V
t
t
d(OFF)
C
C
C
d(ON)
Q
Q
I
I
R
Q
SD
GS(th)
GSS
q
DSS
t
t
t
oss
rr
iss
rss
gd
rr
r
f
gs
DSS
G
g
②
②
①Current limited by wire bond.
②Pulse test ; Pulse width 300 s, duty cycle 2%.
③Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance V
Parameter
③
③
(T
A
I
I
V
V
V
Frequency=1.0MHz
V
I
R
V
I
=25°C Unless Otherwise Noted)
V
V
V
V
SD
SD
DS
DS
GS
GS
DS
DD
DS
G
GS
DS
DS
GS
GS
=40 A, V
=40A, dl
= 1A, V
=6
=80A
= 30V,
=80V, V
=0V,V
=0V,
=35V, R
= 100V, V
=V
=0V, I
=±25V, V
= 10V, I
2
Test Condition
GS
, I
DS
DS
GEN
DS
SD
GS
GS
=0V,F=1MHz
L
DS
=250 A
=35 ,
=250 A
/dt=100A/ s
= 10V,
=0V
DS
= 10V,
GS
=40A
=0V
=0V
T
J
=85°C
Min.
100
2
RU3710
3600
180
510
210
Typ.
1.5
0.8
90
13
25
72
80
85
20
30
14
3
www.ruichips.com
RU3710
Max.
±100
130
150
120
1.3
25
50
16
30
4
1
Unit
m
nC
nC
pF
ns
ns
nA
V
V
V
A